The Industry’s Most Comprehensive Silicon Wafer Portfolio
SEH America provides a full spectrum of silicon wafer solutions engineered to meet the most rigorous design rules of the modern semiconductor industry.
ISO 9001:2015 & IATF 16949:2016 Quality Systems
Leading-Edge 300mm Mass Production
Custom Engineered COP-Free Crystal
Global Engineering & Technical Support
Explore Our Full Lineup
Below is a quick snapshot of each wafer type we offer:
300mm Wafers
SEH has 300mm wafers suitable for all applications. This includes COP free polished wafers for memory, P/P- and P/P+ epi wafers, SOI for logic, RF, and photonics. High resistivity and low oxygen (Oi) are available.
300mm
Wafers
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Polished
Wafers
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Polished wafers
Polished wafers can be produced in orientations <100>, <111>, and <110>. Dopants for all diameters can be boron and phosphorus. Arsenic, antimony, and red phos doping are also available for 200mm and smaller diameters. High resistivity ( > 1000 ohm-cm ) and low resistivity ( < 0.005 ohm-cm ) are both available. Non-standard thickness wafers suitable for MEMS are available up to 200mm in diameter. SEH wafering and polishing technology can achieve start-of-the-art flatness levels required for advanced memory and logic applications. Defect sizes as small as 15nm can be optimized.
SOI
Wafers
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SOI wafers
SEH has technologies for producing SOI wafers by bonding and grinding two wafers, as well as layer transfer technologies, which involve the splitting of a thin layer of silicon from the bond wafer. The thicker wafer type is commonly used for MEMS and power management, while the thinner SOI type is commonly used for logic, RF, photonics, and quantum computing.
200mm
Wafers
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200mm Wafers
SEH has 200mm wafers suitable for all applications. This includes standard CZ polished wafers, COP free polished wafers, epi wafers of all types, argon annealed wafers, FZ wafers, thick bonded SOI wafers (more than 1 micron), and thin SOI wafers (less than 1 micron). SEH wafers are used for all device applications. Ultra-flat wafers and double-sided polish (DSP) are available. High resistivity and low oxygen (Oi) are available.
Epitaxial
Wafers
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Epitaxial wafers
P/P-, P/P+, N/N-, and N/N+ wafers are available and can be optimized for the specific device applications. The maximum thickness of the epi layer will depend on the diameter – please inquire. SEH epi wafers are used for advanced logic, analog, and mixed-signal devices, power management and control, image sensors, and many other applications.
High
Resistivity
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High Resistivity
The effective resistivity of CZ silicon wafers is determined by the dopant levels as well as the interstitial oxygen (Oi), which can generate thermal donors. For stable high-resistivity silicon wafers, SEH is using proprietary MCZ crystal growth recipes to achieve very low levels of Oi and eliminate thermal donor generation during device production. SEH high-res MCZ wafers can be sold as polished wafers or used in the production of SOI wafers. High-res silicon is very commonly used in RF devices to reduce parasitic conduction and improve device harmonic performance. Resistivity minimum specs greater than 5000 ohm-cm are available
Small
Diameter
Wafers
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Small Diameter Wafers
SEH is producing 150mm wafers. We are no longer producing 100mm wafers.
If you have specific needs, please ask.
SEH wafers are commonly used for MEMS, as well as traditional semiconductor devices.
In addition to polished and epi wafers, we are producing FZ, diffused wafers, and thick SOI (more than 1 micron)
Annealed
Wafers
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Annealed wafers
Argon annealed wafers are available at 200mm diameter and are commonly used for a variety of fundamental device technologies. SEH uses nitrogen doping in the CZ crystal and optimized annealing recipes to tune the surface conditions of the wafer, as well as tune the bulk properties of the wafer for gettering and mechanical strength.
FZ
Wafers
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FZ wafers
Float Zone wafers are produced without a crucible by passing silicon feed stock through an RF induction coil, which melts the silicon, which then re-crystallizes in single-crystal with almost zero incorporated oxygen (Oi). FZ silicon crystals can also have very stable resistivity from top to bottom, unlike CZ and MCZ crystals, which are impacted by the segregation phenomenon, which causes dopant concentration to rise from the top (seed end) to the bottom of the crystal. These two properties of FZ crystals, very low Oi and very flat resistivity axial profile, make FZ wafers particularly useful in many device applications, particularly the production of power management devices like IGBTs and opto-electronic devices like photo-diodes. SEH offers FZ wafers up to 200mm in diameter. For 300mm, we have an MCZ alternative wafer. Please inquire.
Diffused
Wafers
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Diffused wafers
SEH offers a deep diffused wafer in which n-type phosphorus doping is diffused from the backside of a lightly doped wafer, resulting in a junction between the lightly and heavily doped regions at precise depths from the front surface of the wafer. This diffused wafer is available up to 150mm in diameter and is commonly used for power management devices and opto-electronic devices. The final structure is similar to an N/N+ epi wafer except that the thickness of the lightly doped surface region can be much deeper than economically achieved with epi. The diffusion profile may also provide benefits that are not possible with the dopant profile of an epi wafer.
Build Your Technology on
Our Foundation
SEH delivers a full portfolio of CZ and FZ silicon wafers up to 300 mm, including polished, epitaxial, SOI, and high-resistivity options. Our wafers enable advanced performance across logic, memory, RF, power, photonics, and MEMS devices.
For non-product inquiries, click below.
Core Silicon Wafer Products:
Engineering the Foundation
Dominating Leading-Edge Nodes
Operating under ISO 9001:2015 and IATF 16949:2016 standards, we deliver wafers that meet the most demanding design rules—down to 20nm and beyond. Our quality reputation is built on global technical innovation across Japan, Malaysia, Europe, Taiwan, and the U.S.A.
Eliminating Yield Loss
SEH IG NANA™ technology utilizes nitrogen-doped and argon-annealed processes to eliminate near-surface defects. These solutions provide a defect-free denuded zone and high-density bulk micro defects to maximize gettering efficiency and increase device yields.
Powering Specialized Architectures
We offer bonded and Unibond® SOI technology for RF SoC, MEMS, and high-speed LSIs. Our patented High-Res CZ crystal (>1,000 ohm.cm) is engineered specifically to decrease cross-talk and improve noise isolation in RF circuitryOperating under ISO 9001:2015 and IATF 16949:2016 standards, we maintain a relentless commitment to quality. Our success is built on a simple philosophy: Excellence in service, integrity in product, and a zero-compromise safety environment for our people.
Specialized Utility & Rapid Support
We provide a stability package designed to protect your health, grow your wealth, and support your life outside the facility.
Solution
The Advantage
Discrete & Power MOSFETs
Heavily doped substrates (N+, Red Phosphorus) designed to minimize Rds(on) and accelerate time-to-market.
Test & Monitor Optimization
High-precision wafers developed for fab particle monitoring and leading-edge lithography tool qualification.
Discrete & Power MOSFETs
Our Stock Products inventory offers generic-spec wafers ready for immediate delivery to support R&D and rapid prototypingHeavily doped substrates (N+, Red Phosphorus) designed to minimize Rds(on) and accelerate time-to-market.
Unrivaled Precision for
Next-Generation Architecture
Our IG NANA™ technology eliminates near-surface defects, providing a defect-free denuded zone that significantly increases your final output
Maximized Device Yields
Our IG NANA™ technology eliminates near-surface defects, providing a defect-free denuded zone that significantly increases your final output.
Extreme Surface Flatness
Our 200mm and 300mm polishing processes are specifically optimized to meet the most demanding flatness requirements for 20nm nodes and beyond.
Superior Signal Integrity
Utilize our patented High-Res CZ crystal to decrease cross-talk and improve noise isolation in sensitive RF SoC and MEMS circuitry.
Accelerated Time-to-Market
Minimize Rds(on) with our heavily doped substrates or leverage our Stock Products inventory for immediate R&D and prototyping needs.
Certified Quality Leadership
Every wafer is backed by rigorous IATF 16949:2016 and ISO 9001:2015 quality management systems to ensure industry-leading reliability.
Accelerated Time-to-Market
Minimize Rds(on) with our heavily doped substrates or leverage our Stock Products inventory for immediate R&D and prototyping needs.
Certified Quality Leadership
Every wafer is backed by rigorous IATF 16949:2016 and ISO 9001:2015 quality management systems to ensure industry-leading reliability.
Other Shin-Etsu
Products
If you are looking for products other than semiconductor silicon wafers, please visit the Shin-Etsu Corporate Inquiry page here for the following:
